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Proceedings Paper

Device performances analysis of standard-cells transistors using silicon simulation and build-in device simulation
Author(s): Eitan N. Shauly; Allon Parag; Uri Krispil; Israel Rotstein
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Paper Abstract

A simple methodology to predict transistors performances due to systematic lithography and etch effects is presented. It is based on physical silicon simulation, followed by device modeling, incorporated in the silicon simulation software. This method enables an easy and efficient analysis of device parameters with the same simulation tool usually used for process analysis. The method is demonstrated on small and large arrays of standard cell blocks, designed for TS013SL (0.13μm Standard Logic for General Purposes) Platform. Electrical parameters, like drive current (Idsat), and Off current (Ioff) were predicted. Comparison between different transistors types, having the same W/L but different layout configuration and various layout environments (around the transistor) was made in terms of performances as well as process variability.

Paper Details

Date Published: 2 April 2010
PDF: 8 pages
Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 764110 (2 April 2010); doi: 10.1117/12.845622
Show Author Affiliations
Eitan N. Shauly, Tower Semiconductor Ltd. (Israel)
Technion-Israel Institute of Technology (Israel)
Allon Parag, Tower Semiconductor Ltd. (Israel)
Uri Krispil, Mentor Graphics Corp. (Israel)
Israel Rotstein, Tower Semiconductor Ltd. (Israel)

Published in SPIE Proceedings Vol. 7641:
Design for Manufacturability through Design-Process Integration IV
Michael L. Rieger; Joerg Thiele, Editor(s)

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