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Proceedings Paper

Improving copper CMP topography by dummy metal fill co-optimizing electroplating and CMP planarization
Author(s): Li-Fu Chang; Zhong Fan; Daniel Lu; Alex Bao
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Paper Abstract

In this paper, we present a dummy metal fill method based on co-optimization of both ECP and CMP processes. We present the layout dependent, minimum variance algorithm that matches not only metal densities across two-dimensional tiles of layout, but also the perimeters and shapes of metal lines in each tile. Using co-optimization as the fill criterion, our algorithm effectively minimizes the metal height differences as verified by model based CMP simulations. In addition, it also renders pre-characterization of fill constraints with respect to timing and signal integrity assurance. We also show our silicon data measured on a 65nm process that sufficiently provide proof of the method.

Paper Details

Date Published: 2 April 2010
PDF: 8 pages
Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410W (2 April 2010); doi: 10.1117/12.845496
Show Author Affiliations
Li-Fu Chang, Semiconductor Manufacturing International Corp. (China)
Zhong Fan, Semiconductor Manufacturing International Corp. (China)
Daniel Lu, Semiconductor Manufacturing International Corp. (China)
Alex Bao, Semiconductor Manufacturing International Corp. (China)

Published in SPIE Proceedings Vol. 7641:
Design for Manufacturability through Design-Process Integration IV
Michael L. Rieger; Joerg Thiele, Editor(s)

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