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Proceedings Paper

Characterization of external quantum efficiency and absorption efficiency in GaAs/ InGaP double heterostructures for laser cooling applications
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Paper Abstract

The state of current research in laser cooling of semiconductors is reviewed. Emphasis is placed on the characterization of external quantum efficiency and absorption efficiency in GaAs/InGaP double heterostuctures. New experimental results will be presented that characterize device operation as a function of laser excitation power and temperature. Optimum carrier density is obtained independently and used as a screening tool for sample quality. The crucial importance of parasitic background absorption is discussed.

Paper Details

Date Published: 18 February 2010
PDF: 13 pages
Proc. SPIE 7614, Laser Refrigeration of Solids III, 76140B (18 February 2010); doi: 10.1117/12.845053
Show Author Affiliations
Chengao Wang, The Univ. of New Mexico (United States)
Michael P. Hasselbeck, The Univ. of New Mexico (United States)
Chia-Yeh Li, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7614:
Laser Refrigeration of Solids III
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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