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Proceedings Paper

AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications
Author(s): B. H. Chu; Y. L. Wang; K. H. Chen; C. Y. Chang; C. F. Lo; S. J. Pearton; G. Papadi; J. K. Coleman; B. J. Sheppard; C. F. Dungen; Kevin Kroll; Nancy Denslow; A. Dabiran; P. P. Chow; J. W. Johnson; E. L. Pine; K. J. Linthicum; F. Ren
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Paper Abstract

A promising sensing technology utilizing AlGaN/GaN high electron mobility transistors (HEMTs) has been developed to analyze a wide variety of environmental and biological gases and liquids. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. Examples of detecting mercury ions, perkinsus, lactic acid, carbon dioxide, and vitellogenin are discussed in this paper.

Paper Details

Date Published: 5 May 2010
PDF: 12 pages
Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790Q (5 May 2010); doi: 10.1117/12.844995
Show Author Affiliations
B. H. Chu, Univ. of Florida (United States)
Y. L. Wang, Univ. of Florida (United States)
K. H. Chen, Univ. of Florida (United States)
C. Y. Chang, Univ. of Florida (United States)
C. F. Lo, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)
G. Papadi, Univ. of Florida (United States)
J. K. Coleman, Univ. of Florida (United States)
B. J. Sheppard, Univ. of Florida (United States)
C. F. Dungen, Maryland Dept. of Natural Resources (United States)
Kevin Kroll, Univ. of Florida (United States)
Nancy Denslow, Univ. of Florida (United States)
A. Dabiran, SVT Associates, Inc. (United States)
P. P. Chow, SVT Associates, Inc. (United States)
J. W. Johnson, Nitronex Corp. (United States)
E. L. Pine, SVT Associates, Inc. (United States)
Nitronex Corp. (United States)
K. J. Linthicum, Nitronex Corp. (United States)
F. Ren, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 7679:
Micro- and Nanotechnology Sensors, Systems, and Applications II
Thomas George; M. Saif Islam; Achyut Kumar Dutta, Editor(s)

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