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Proceedings Paper

High temperature and high peak-power 808nm QCW bars and stacks
Author(s): G. Bacchin; A. Fily; B. Qiu; D. Fraser; S. Robertson; V. Loyo-Maldonado; S. D. McDougall; B. Schmidt
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Paper Abstract

808 nm QCW bars were fabricated and mounted with hard solder technology onto H-mounts and G-stacks. At room temperature, reliable operation has been demonstrated at 400W at 400A per single 1-cm bar and for a G-stack at 3kW at around 300A. High temperature reliable operation has been demonstrated for both devices up to 95°C. Both types of devices were tested at various pulse widths and duty cycles. Both optical power and wavelength dependencies on the various conditions have been studied.

Paper Details

Date Published: 17 February 2010
PDF: 11 pages
Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830P (17 February 2010); doi: 10.1117/12.843735
Show Author Affiliations
G. Bacchin, Intense Ltd. (United Kingdom)
A. Fily, Intense-US (United States)
B. Qiu, Intense Ltd. (United Kingdom)
D. Fraser, Intense Ltd. (United Kingdom)
S. Robertson, Intense Ltd. (United Kingdom)
V. Loyo-Maldonado, Intense-US (United States)
S. D. McDougall, Intense Ltd. (United Kingdom)
B. Schmidt, Intense Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 7583:
High-Power Diode Laser Technology and Applications VIII
Mark S. Zediker, Editor(s)

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