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Proceedings Paper

AlGaN-based material characterizations and recent development of related solar-blind ultraviolet detectors
Author(s): Xiangyang Li; Jintong Xu; Yan Zhang; Yonggang Yuan; Kaihui Chu; Chao Li; Xichang Bao; Ling Wang
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Paper Abstract

Recently, AlGaN-based material and related devices have been investigated intensively because of their applications in ultraviolet solar-blind detectors, blue light-emitting diodes, UV laser diodes, and high-power-temperature devices. Due to intrinsic difficulty to grow high aluminum fraction material, achieving reasonable good quality of wafers is the key aspect to fabricate high performance solar-blind AlGaN-based detectors. Transmission spectra, XRD, and a two dimension transmission scanning system were employed to evaluate the properties of AlGaN-based material. Wet chemical etching process of n-type AlGaN in 20% aqueous KOH solutions was performed to reduce dry etching damages and the average leakage current. I-V characterization indicated that the average leakage current of the wet etching treated detectors was lower than that of the detectors without treatment by about one order of magnitude. Ti/Al/Ti/Au contact on n-type Al0.63Ga0.37N was optimized to get a low series resistance. 128×128 solar-blind AlGaN UV Focal Plane Arrays (FPAs) were fabricated and the performance were characterized. A CTIA (capacitive-transimpedance) readout circuit architecture has been proven to be well suited for AlGaN detectors arrays. The results show that 128×128 back-illuminated AlGaN PIN detector SNR is as high as 74 db at a speed of above 30 frames per second.

Paper Details

Date Published: 12 October 2009
PDF: 8 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751802 (12 October 2009); doi: 10.1117/12.843646
Show Author Affiliations
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Jintong Xu, Shanghai Institute of Technical Physics (China)
Yan Zhang, Shanghai Institute of Technical Physics (China)
Yonggang Yuan, Shanghai Institute of Technical Physics (China)
Kaihui Chu, Shanghai Institute of Technical Physics (China)
Chao Li, Shanghai Institute of Technical Physics (China)
Xichang Bao, Shanghai Institute of Technical Physics (China)
Ling Wang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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