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Proceedings Paper

Photo-damage resistant and phase matching properties of double-doped In:Zn:LiNbO3 crystals
Author(s): Yiran Nie; Rui Wang; Lijuan Min; Yuanjun Song; Biao Wang; Yudong Huang
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Paper Abstract

In:Zn:LiNbO3 crystals have been grown by Czochralski technique. The infrared transmission spectra of the samples showed that the OH- absorption peak of In(3mol.%):Zn(3mol.%):LiNbO3 located at about 3508cm-1, while those of In(1mol.%):Zn(3mol.%):LiNbO3 and In(2mol.%):Zn(3mol.%): LiNbO3 located at about 3485cm-1. The photo-damage resistant ability of the crystals was measured with the directly facula-distort observing method. The results showed that, when doped In3+ and Zn2+ concentration reached their threshold concentration, the photo-damage resistant ability of In(3mol.%):Zn(3mol.%):LiNbO3 was two orders of magnitude higher than that of pure LiNbO3. Second harmonic generation (SHG) experimental results showed that the phase matching temperature of In(3mol.%):Zn(3mol.%):LiNbO3 was almost at room temperature, and their SHG efficiency was higher than that of Zn(7mol.%):LiNbO3 and pure LiNbO3.

Paper Details

Date Published: 20 October 2009
PDF: 5 pages
Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 749373 (20 October 2009);
Show Author Affiliations
Yiran Nie, Harbin Institute of Technology (China)
Rui Wang, Harbin Institute of Technology (China)
Lijuan Min, Harbin Institute of Technology (China)
Yuanjun Song, Harbin Institute of Technology (China)
Biao Wang, Sun Yat-sen Univ. (China)
Yudong Huang, Harbin Institute of Technology (China)

Published in SPIE Proceedings Vol. 7493:
Second International Conference on Smart Materials and Nanotechnology in Engineering
Jinsong Leng; Anand K. Asundi; Wolfgang Ecke, Editor(s)

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