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Proceedings Paper

Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells
Author(s): Yi-Lu Chang; Zetian Mi
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Paper Abstract

We report on the molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells. Vertically aligned p-doped-intrinsic-n-doped (p-i-n) InN nanowires spontaneously formed on n-type Si(111) substrates as well as n-i InN nanowires spontaneously formed on p-Si(111) were demonstrated. With the use of an in situ deposited In seeding layer, such InN nanowires exhibit non-tapered morphology. InN nanowire solar cells display a rectifying ratio of larger than 1,000 under dark, which provides a strong evidence of successful p-doping of InN nanowires. We measured a short-circuit current density of ~ 85 mA/cm2 and a power conversion efficiency of ~ 1.62% under AM 1.5G illumination at approximately 100 mW/cm2. Further improvement in the device performance is being investigated by optimizing the growth and fabrication process.

Paper Details

Date Published: 12 March 2010
PDF: 8 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020A (12 March 2010); doi: 10.1117/12.843258
Show Author Affiliations
Yi-Lu Chang, McGill Univ. (Canada)
Zetian Mi, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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