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Proceedings Paper

Design of Ge/SiGe quantum-confined Stark effect modulators for CMOS compatible photonics
Author(s): Leon Lever; Zoran Ikonić; Alex Valavanis; Robert W. Kelsall
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Paper Abstract

A simulation technique for modeling optical absorption in Ge/SiGe multiple quantum well (MQW) heterostructures is described, based on a combined 6 × 6 k • p hole wave-function a one-band effective mass electron wavefunction calculation. Using this model, we employ strain engineering to target a specific applications-oriented wavelength, namely 1310 nm, and arrive at a design for a MQW structure to modulate light at this wavelength. The modal confinement in a proposed device is then found using finite-element modeling, and we estimate the performance of a proposed waveguide-integrated electroabsorption modulator.

Paper Details

Date Published: 16 February 2010
PDF: 9 pages
Proc. SPIE 7606, Silicon Photonics V, 76060Q (16 February 2010); doi: 10.1117/12.843223
Show Author Affiliations
Leon Lever, Univ. of Leeds (United Kingdom)
Zoran Ikonić, Univ. of Leeds (United Kingdom)
Alex Valavanis, Univ. of Leeds (United Kingdom)
Robert W. Kelsall, Univ. of Leeds (United Kingdom)

Published in SPIE Proceedings Vol. 7606:
Silicon Photonics V
Joel A. Kubby; Graham T. Reed, Editor(s)

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