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Proceedings Paper

Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells
Author(s): Guangyu Liu; Hongping Zhao; Nelson Tansu
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Paper Abstract

In this work, we analyze and optimize the GaN / AlN coupled quantum well design with and without polarization for achieving intersubband transition wavelength at 1.55 μm to serve as quantum cascade lasers (QCL) active region. The computations of the electron-LO phonon and electron-photon scattering rates were carried out to optimize the gain media design for intersubband quantum well (QW) lasers. The AlN / GaN coupled QW structure leads to improved design in optimizing the intersubband transition, in comparison to that of single stage GaN / AlN QW structure. The comparison between polar and non-polar coupled QW results in different characteristics in various scattering rates, which in turn leads to different intersubband gain.

Paper Details

Date Published: 25 February 2010
PDF: 8 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971K (25 February 2010); doi: 10.1117/12.843054
Show Author Affiliations
Guangyu Liu, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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