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Proceedings Paper

Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots
Author(s): T. Ribaudo; B. S. Passmore; D. C. Adams; X. Qian; S. Vangala; W. D. Goodhue; E. A. Shaner; S. A. Lyon; D. Wasserman
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Paper Abstract

We demonstrate room temperature electroluminescence from intersublevel transitions in self-assembled InAs quantum dots in GaAs/AlGaAs heterostructures. The quantum dot devices are grown on GaAs substrates in a Varian Gen II molecular beam epitaxy system. The device structure is designed specifically to inject carriers into excited conduction band states in the dots and force an optical transition between the excited and ground states of the dots. A downstream filter is designed to selectively extract carriers from the dot ground states. Electroluminescence measurements were made by Fourier Transform Infrared Spectroscopy in amplitude modulation step scan mode. Current-Voltage measurements of the devices are also reported. In addition, both single period and multi-period devices are grown, fabricated, characterized, and compared to each other. Finally, we discuss the use of plasmonic output couplers for these devices, and discuss the unique emission observed when the quantum dot layer sits in the near field of the plasmonic top contacts.

Paper Details

Date Published: 12 February 2010
PDF: 12 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161A (12 February 2010); doi: 10.1117/12.843033
Show Author Affiliations
T. Ribaudo, Univ. of Massachusetts Lowell (United States)
B. S. Passmore, Sandia National Labs. (United States)
D. C. Adams, Univ. of Massachusetts Lowell (United States)
X. Qian, Univ. of Massachusetts Lowell (United States)
S. Vangala, Univ. of Massachusetts Lowell (United States)
W. D. Goodhue, Univ. of Massachusetts Lowell (United States)
E. A. Shaner, Sandia National Labs. (United States)
S. A. Lyon, Princeton Univ. (United States)
D. Wasserman, Univ. of Massachusetts Lowell (United States)

Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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