Performance, lifetest data, as well as failure modes from two different device structures will be discussed in this paper, with emitting wavelengths from 780nm to 800nm. The first structure, designed for high temperature operation, has demonstrated good reliability on various packages with output power up to 10W from a 200μm emitting area. The device structure can be operated up to 60°C heatsink temperatures under CW conditions. Then a high efficiency structure is shown with further improvement on operation power and reliability, for room temperature operation. With ongoing lifetest at 12A and 50°C heatsink temperature, <1000 FIT has been achieved for 6.5W and 33°C operation, on both designs. MTT10%F at 10W and 25°C operation is estimated to be more than 20,000 hours. Devices retain more than 20W rollover power under CW conditions, when re-tested after several thousand hours of accelerated lifetest. Paths for reliability improvement will also be discussed based on observed lifetest failure modes from these two structures.

Date Published: 17 February 2010
PDF: 10 pages
Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 758305 (17 February 2010); doi: 10.1117/12.842876

Published in SPIE Proceedings Vol. 7583:
High-Power Diode Laser Technology and Applications VIII
Mark S. Zediker, Editor(s)