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Proceedings Paper

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
Author(s): A. Strittmatter; M. Teepe; C. Knollenberg; Z. Yang; C. Chua; N. M. Johnson; P. Spiberg; V. Ivantsov; A. Syrkin; L. Shapovalov; A. Usikov
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Paper Abstract

Results for long-wavelength emitters are presented for semi-polar InGaN/AlGaN/GaN heterostructures grown on GaN(1122)/m-sapphire templates by metalorganic chemical vapor deposition. The semi-polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X-ray diffraction measurements indicated high crystallographic quality that approaches that of GaN(0001) layers on sapphire. A comparison based on optical pumping experiments, low- and high-density excitation photoluminescence experiments, and atomic force microscopy is drawn between InGaN/GaN quantum well laser heterostructures grown by metalorganic vapor phase epitaxy either on either polar GaN(0001)/c-sapphire or on semi-polar GaN(1122)/m-sapphire. C-plane InGaN/GaN/sapphire structures exhibited low threshold pump power densities < 500 kW/cm2 for emission wavelengths up to 450 nm. For laser structures beyond 450 nm the threshold pump power density rapidly increased resulting in a maximum lasing wavelength of 460 nm. Semipolar InGaN/GaN(1122)/m-sapphire structures showed a factor of 2-4 higher threshold pump power densities at wavelengths below 440 nm which is partly due to lower crystalline perfection of the semi-polar GaN/sapphire templates. However, at longer wavelengths > 460 nm the threshold power density for lasing of semi-polar heterostructures is less than that for c-plane heterostructures which enabled rapid progress to demonstration of lasing at 500 nm wavelength on semi-polar heterostructures. The absence of V-type defects in semi-polar, long-wavelength InGaN/GaN structures which are usually present in long-wavelength c-plane InGaN/GaN structures is attributed to this phenomenon.

Paper Details

Date Published: 12 February 2010
PDF: 6 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160H (12 February 2010); doi: 10.1117/12.842177
Show Author Affiliations
A. Strittmatter, Palo Alto Research Ctr., Inc. (United States)
M. Teepe, Palo Alto Research Ctr., Inc. (United States)
C. Knollenberg, Palo Alto Research Ctr., Inc. (United States)
Z. Yang, Palo Alto Research Ctr., Inc. (United States)
C. Chua, Palo Alto Research Ctr., Inc. (United States)
N. M. Johnson, Palo Alto Research Ctr., Inc. (United States)
P. Spiberg, Ostendo Technologies, Inc. (United States)
V. Ivantsov, TDI, Inc. (United States)
A. Syrkin, TDI, Inc. (United States)
L. Shapovalov, TDI, Inc. (United States)
A. Usikov, TDI, Inc. (United States)

Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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