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Proceedings Paper

Low-temperature study of lasing characteristics for 1.3-µm AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser
Author(s): K. W. Su; Yi-Fan Chen; S. C. Huang; A. Li; S. C. Liu; Y. F. Chen; K. F. Huang
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Paper Abstract

We report a low-temperature 1.3μm AlGaInAs quantum-well laser pumped by a 1.06μm active Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is achieved at temperature as low as 233K compared to the average power of 50mW obtained at room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.

Paper Details

Date Published: 17 February 2010
PDF: 7 pages
Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 75780Z (17 February 2010); doi: 10.1117/12.841897
Show Author Affiliations
K. W. Su, National Chiao Tung Univ. (Taiwan)
Yi-Fan Chen, National Chiao Tung Univ. (Taiwan)
S. C. Huang, National Chiao Tung Univ. (Taiwan)
A. Li, National Chiao Tung Univ. (Taiwan)
S. C. Liu, National Chiao Tung Univ. (Taiwan)
Y. F. Chen, National Chiao Tung Univ. (Taiwan)
K. F. Huang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7578:
Solid State Lasers XIX: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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