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Proceedings Paper

Simulation of high brightness tapered lasers
Author(s): I. Esquivias; H. Odriozola; J. M. G. Tijero; L. Borruel; A. M. Mínguez; N. Michel; M. Calligaro; M. Lecomte; O. Parillaud; M. Krakowski
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Paper Abstract

Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi- 3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyzed.

Paper Details

Date Published: 12 February 2010
PDF: 13 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161E (12 February 2010); doi: 10.1117/12.841688
Show Author Affiliations
I. Esquivias, Univ. Politécnica de Madrid (Spain)
H. Odriozola, Univ. Politécnica de Madrid (Spain)
J. M. G. Tijero, Univ. Politécnica de Madrid (Spain)
L. Borruel, Univ. Politécnica de Madrid (Spain)
A. M. Mínguez, Univ. Politécnica de Madrid (Spain)
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)

Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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