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Proceedings Paper

Study on temperature characteristic of green photodetector on Si substrate
Author(s): Xiansong Fu; Suying Yao; Shengcai Zhang; Yunguang Zheng; Pingjuan Niu; Xiaoyun Li; Guanghua Yang
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Paper Abstract

In the paper, a silicon PN junction photodetector is developed on the basis of n-type single-crystal (100) silicon substrate. The properties of this semiconductor photodetctor depend on the temperature to certain extent. We emphasize on the study on temperature characteristic of the photodetector: Firstly, the temperature behavior of dark current at zero bias voltage and wide temperature range was investigated. Results show that dark current increases exponentially with temperature over room temperature. Secondly, the temperature behavior of photo current at zero bias voltage and wide temperature range was studied. The temperature characteristic is analysesed in the theory and optimized.

Paper Details

Date Published: 25 February 2010
PDF: 8 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759722 (25 February 2010); doi: 10.1117/12.841621
Show Author Affiliations
Xiansong Fu, Tianjin Polytechnic Univ. (China)
Suying Yao, Tianjin Univ. (China)
Shengcai Zhang, Tianjin Univ. (China)
Yunguang Zheng, Tianjin Univ. (China)
Pingjuan Niu, Tianjin Polytechnic Univ. (China)
Xiaoyun Li, Tianjin Polytechnic Univ. (China)
Guanghua Yang, Tianjin Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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