
Proceedings Paper
Double tunneling-injection quantum dot laser: effect of the wetting layerFormat | Member Price | Non-Member Price |
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Paper Abstract
Effect of the wetting layer (WL) on the output power of a double tunneling-injection (DTI) quantum dot (QD) laser is
studied. Such a laser was proposed earlier to suppress bipolar population and hence electron-hole recombination outside
QDs. In the Stranski-Krastanow growth mode, QDs are formed on an initially grown WL. The WL is directly connected
to QDs by the processes of carrier capture and thermal escape. These processes are described in terms of the temporal
cross-sections of electron and hole capture from the WL into QDs. The electron and hole densities and parasitic electron-hole
recombination current density in the WL, and the output power of the device are calculated as functions of the
temporal cross-sections. These calculations provide the basis for optimization of a DTI QD laser with the WL aimed at
maximizing the output power. The larger the temporal cross-section of electron capture into QDs, the more efficient is
the electron capture from the WL into QDs, and hence the higher is the output power. The smaller the temporal crosssection
of hole capture into QDs, the less intensive is the hole thermal escape from QDs into the WL, the less intensive is
the recombination in the WL, and hence the higher is the output power.
Paper Details
Date Published: 24 February 2010
PDF: 12 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100T (24 February 2010); doi: 10.1117/12.841219
Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)
PDF: 12 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100T (24 February 2010); doi: 10.1117/12.841219
Show Author Affiliations
Dae-Seob Han, Virginia Polytechnic Institute and State Univ. (United States)
Levon V. Asryan, Virginia Polytechnic Institute and State Univ. (United States)
Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)
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