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Proceedings Paper

High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasers
Author(s): Hsin-Chieh Yu; Cheng-Tien Wan; Yan-Kuin Su; Ricky W. Chuang; Wei-Cheng Chen; Chun-Yuan Huang; Wei-Hung Lin; Manfred H. Pilkuhn
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Paper Abstract

High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using triethylgallium (TEGa) as the precursor to grow QW at low temperature (525°C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature (dλ/dT) from 0.24 to 0.287 nm/K. These values are lower than other previously reported results. The QW grown at high temperature (600 °C) by using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature and dλ/dT is 0.36 nm/K, which is higher than those lasers grown at lower temperature.

Paper Details

Date Published: 25 February 2010
PDF: 11 pages
Proc. SPIE 7598, Optical Components and Materials VII, 759818 (25 February 2010); doi: 10.1117/12.841058
Show Author Affiliations
Hsin-Chieh Yu, National Cheng Kung Univ. (Taiwan)
Cheng-Tien Wan, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Ricky W. Chuang, National Cheng Kung Univ. (Taiwan)
Wei-Cheng Chen, National Cheng Kung Univ. (Taiwan)
Chun-Yuan Huang, National Cheng Kung Univ. (Taiwan)
Wei-Hung Lin, National Cheng Kung Univ. (Taiwan)
Manfred H. Pilkuhn, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7598:
Optical Components and Materials VII
Shibin Jiang; Michel J. F. Digonnet; John W. Glesener; J. Christopher Dries, Editor(s)

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