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Proceedings Paper

The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate
Author(s): Sheng-Fu Yu; Shoou-Jinn Chang; Sheng-Po Chang; Ray-Ming Lin
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Paper Abstract

We demonstrated very thick (~400 nm) AlInGaN quaternary alloy grown on GaN epilayer by MOCVD. The Optical, electronic, crystalline quality and surface morphology of AlInGaN/GaN hetero structures with various TMI molar flow rate were be extensively discussed. With Al0.89In0.02GaN/GaN fully lattice matched structure, less and small V-defect pits and good crystal quality comparing with the other lattice mismatched AlInGaN/GaN hetero-structures were discovered. Finally, the difference AlInGaN quaternary epilayers could be directly applied to high power LED structure in the future by the same barrier growth conditions.

Paper Details

Date Published: 12 March 2010
PDF: 7 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020B (12 March 2010); doi: 10.1117/12.840824
Show Author Affiliations
Sheng-Fu Yu, National Cheng Kung Univ. (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)
Sheng-Po Chang, National Cheng Kung Univ. (Taiwan)
Ray-Ming Lin, Chang Gung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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