
Proceedings Paper
Two-sections tapered diode lasers for 1 Gbps free-space optical communications with high modulation efficiencyFormat | Member Price | Non-Member Price |
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Paper Abstract
High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in freespace
optical communications and (at lower frequencies of around 100 MHz) display applications for frequency
doubling to the green. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with
a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of
19 W/A. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high
extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A.
Paper Details
Date Published: 12 February 2010
PDF: 11 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161F (12 February 2010); doi: 10.1117/12.840702
Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
PDF: 11 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161F (12 February 2010); doi: 10.1117/12.840702
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Ruiz, Alcatel-Thales III-V Lab (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
Y. Robert, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
M. Ruiz, Alcatel-Thales III-V Lab (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
Y. Robert, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
I. Esquivias, Univ. Politécnica de Madrid (Spain)
H. Odriozala, Univ. Politécnica de Madrid (Spain)
J. M. G. Tijero, Univ. Politécnica de Madrid (Spain)
C. H. Kwok, Univ. of Cambridge (United Kingdom)
R. V. Penty, Univ. of Cambridge (United Kingdom)
I. H. White, Univ. of Cambridge (United Kingdom)
H. Odriozala, Univ. Politécnica de Madrid (Spain)
J. M. G. Tijero, Univ. Politécnica de Madrid (Spain)
C. H. Kwok, Univ. of Cambridge (United Kingdom)
R. V. Penty, Univ. of Cambridge (United Kingdom)
I. H. White, Univ. of Cambridge (United Kingdom)
Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
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