Share Email Print

Proceedings Paper

Using reach-through techniques to improve the external power efficiency of silicon CMOS light emitting devices
Author(s): Monuko du Plessis; Petrus J. Venter; Alfons W. Bogalecki
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

For CMOS silicon-based light emitting devices to become practical the external power efficiency must be increased. In this paper a reach-through technique is described whereby the external power efficiency can be increased as a result of three phenomena: i) increase in internal quantum efficiency, ii) increase in light extraction efficiency, and iii) lower operating voltage. The three techniques are discussed and the factor 7 improvement in external power efficiency will be described in terms of the electrical characteristics as well as the external radiation patterns.

Paper Details

Date Published: 16 February 2010
PDF: 12 pages
Proc. SPIE 7606, Silicon Photonics V, 760612 (16 February 2010); doi: 10.1117/12.840646
Show Author Affiliations
Monuko du Plessis, Univ. of Pretoria (South Africa)
Petrus J. Venter, Univ. of Pretoria (South Africa)
Alfons W. Bogalecki, INSiAVA (Pty) Ltd. (South Africa)

Published in SPIE Proceedings Vol. 7606:
Silicon Photonics V
Joel A. Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top