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Proceedings Paper

Life-stress relationship for thin film transistor gate line interconnects on flexible substrates
Author(s): Thomas Martin; Aris Christou
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Paper Abstract

Change in resistance of interconnect traces on flexible substrates is dependent on material properties and mechanical stress imposed by tensile strain. Dedicated test structures and a mechanical flexing / data collection system were designed and fabricated to collect time to failure data based on cyclic loading to different radii of curvature. We propose a life-stress model based on an inverse power law relationship defining the characteristic life of a Weibull life distribution.

Paper Details

Date Published: 23 February 2010
PDF: 9 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 760712 (23 February 2010); doi: 10.1117/12.840044
Show Author Affiliations
Thomas Martin, Univ. of Maryland, College Park (United States)
Aris Christou, Univ. of Maryland, College Park (United States)

Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)

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