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Proceedings Paper

High-peak-power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser
Author(s): A. Klehr; B. Sumpf; K. H. Hasler; J. Fricke; A. Liero; Th. Hoffmann; G. Erbert; G. Tränkle
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Paper Abstract

Experimental results from a Q-switched three section tapered laser, with an InGaAs triple quantumwell (TQW) active region, consisting of a 2000 μm long tapered element, a 1000 μm ridge waveguide (RW) section and a 1000 μm long passive grating section with a 6th order surface grating were fabricated and investigated. For the generation of short optical pulses the tapered section was biased with a dc-current and the RW absorber section was modulated by a 1 GHz sinusoidal current. By biasing the tapered section with 4 A cw current and GHz sinusoidal modulation of the RW section, short pulses of ~75 ps width and a pulse power of 6.3 W corresponding to 470 pJ pulse energy is reached. The Q-switched pulses are single mode with a central emission wavelength of ~1064 nm and a FWHM spectral width ≤ 0.05 nm.

Paper Details

Date Published: 12 February 2010
PDF: 12 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76161J (12 February 2010); doi: 10.1117/12.839958
Show Author Affiliations
A. Klehr, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
B. Sumpf, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
K. H. Hasler, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
J. Fricke, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
A. Liero, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Th. Hoffmann, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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