Share Email Print

Proceedings Paper

Light emission from Si LED controlling by a gate voltage and SOS tunneling junction
Author(s): Wei-Lian Guo; Xiao-Yun Li; Chun-Hong Huang; Xian-Song Fu; Ping-Juan Niu; Guang-Hua Yang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A novel Si LED with three terminals has been designed and fabricated compatible completely with standard n-well CMOS technology. It is composed by a combination of a forward biased p+-n junction controlling by gate voltage and a poly-Si/ultrathin oxide/Si tunneling junction. The experimental results demonstrates that: (1)The optical emitting power of LED increases with both forward p+-n junction current increasing and positive gate voltage increasing; (2) The optical emitting power of LED still increases with gate Voltage increasing while p+-n junction forward current at zero; (3) The spectra of the optical output power on wavelength λ occurs a peak near 1000nm. The results can be explained from the enhancement on the p-n junction forward current by the gate voltage induced barrier lowering effect and the S(poly-Si)OS tunneling junction theory.

Paper Details

Date Published: 16 February 2010
PDF: 10 pages
Proc. SPIE 7606, Silicon Photonics V, 760619 (16 February 2010); doi: 10.1117/12.839927
Show Author Affiliations
Wei-Lian Guo, Tianjin Polytechnic Univ. (China)
Tianjin Univ. (China)
Xiao-Yun Li, Tianjin Polytechnic Univ. (China)
Chun-Hong Huang, Tianjin Polytechnic Univ. (China)
Xian-Song Fu, Tianjin Polytechnic Univ. (China)
Ping-Juan Niu, Tianjin Polytechnic Univ. (China)
Guang-Hua Yang, Tianjin Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 7606:
Silicon Photonics V
Joel A. Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?