Proceedings Paper
Role of the electron blocking layer in the current transport of efficient III-N light-emitting diodes| Format | Member Price | Non-Member Price |
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Paper Abstract
Electron blocking layers (EBLs) are commonly used to reduce the leakage current in modern multi-quantum
well (MQW) InGaN light-emitting diodes (LEDs). We study the effect of the EBL and doping on the operation
and efficiency of LEDs. We simulate both conventional MQW LEDs with AlGaN EBL, LEDs with quaternary
AlInGaN EBL and LEDs without EBL. We show that the elimination of the polarization charges at the EBL
interface greatly enhances the injection efficiency and that the hole injection in MQW lattice can be optimized
by doping. The efficiency droop limiting the high power operation is also analyzed to determine the underlying
mechanisms in the simulated MQW structures. Based on these results, we discuss the measures to increase the
overall efficiency MQW structures.
Paper Details
Date Published: 25 February 2010
PDF: 8 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970E (25 February 2010); doi: 10.1117/12.839406
Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)
PDF: 8 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970E (25 February 2010); doi: 10.1117/12.839406
Show Author Affiliations
Oskari Heikkilä, Helsinki Univ. of Technology (Finland)
Jani Oksanen, Helsinki Univ. of Technology (Finland)
Jani Oksanen, Helsinki Univ. of Technology (Finland)
Jukka Tulkki, Helsinki Univ. of Technology (Finland)
Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)
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