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Proceedings Paper

Rare-earth-ion-doped Al2O3 for integrated optical amplification
Author(s): K. Wörhoff; J. D. B. Bradley; L. Agazzi; M. Pollnau
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Paper Abstract

Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 1020 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 1020 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. 170 Gbit/s high-speed data amplification was demonstrated in an Al2O3:Er3+ channel waveguide with open eye diagrams and without penalty. A lossless 1×2 power splitter has been realized in Al2O3:Er3+ with net gain over a wavelength range of 40 nm (1525-1565 nm) across the complete telecom C-band.

Paper Details

Date Published: 11 February 2010
PDF: 8 pages
Proc. SPIE 7604, Integrated Optics: Devices, Materials, and Technologies XIV, 760408 (11 February 2010); doi: 10.1117/12.839188
Show Author Affiliations
K. Wörhoff, Univ. of Twente (Netherlands)
J. D. B. Bradley, Univ. of Twente (Netherlands)
L. Agazzi, Univ. of Twente (Netherlands)
M. Pollnau, Univ. of Twente (Netherlands)

Published in SPIE Proceedings Vol. 7604:
Integrated Optics: Devices, Materials, and Technologies XIV
Jean-Emmanuel Broquin; Christoph M. Greiner, Editor(s)

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