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Proceedings Paper

High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process
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Paper Abstract

As IC manufactures explore different paths to meet the resolution requirements for next generation technology, patterning schemes which utilize a double photoresist patterning process are under extensive evaluation. One dual patterning process under consideration uses a 172nm UV cure to render the first photoresist pattern insoluble to the casting solvents and developer chemistries used to define the second photoresist pattern. Line-space resist patterning is used to understand the effect of the 172nm UV light on the SiBARC, under-layer film stack and how it influences the patterned CD. This is followed by cross-grid and pitch-split double patterning using 172 nm UV light of varying dose to freeze the first photoresist layer patterned using a tri-layer film configuration. In the final section we discuss the effects of the 172nm UV cure on the SiBARC film thickness and optical properties. Simulations are run to understand the change in the focus-exposure process window due to changes in the SiBARC film due to the 172nm UV cure.

Paper Details

Date Published: 11 December 2009
PDF: 12 pages
Proc. SPIE 7520, Lithography Asia 2009, 75200O (11 December 2009); doi: 10.1117/12.837205
Show Author Affiliations
Joseph Kennedy, Honeywell (United States)
ZeYu Wu, Honeywell (United States)
Kyle Flanigan, Honeywell (United States)
Junyan Dai, Sokudo Co., Ltd. (United States)
Thomas Wallow, Global Foundries Inc. (United States)

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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