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Proceedings Paper

A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows
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Paper Abstract

Extreme ultraviolet (EUV) lithography is one of the promising candidates for device manufacturing with features smaller than 22 nm. Unlike traditional optical projection systems, EUV light needs to rely on reflective optics and masks with an oblique incidence for image formation in photoresist. The consequence of using a reflective projection system can result in horizontal-vertical (H-V) bias and pattern shift, which are generally referred as shadowing. Approaches proposed to compensate for shadowing effect include changing mask topography, modifying mask focus, and biasing features along the azimuth angle, which are all rule-based. However, the complicated electromagnetic interaction between closely placed circuit patterns can not only induce additional optical proximity effect but also change the shadowing effect. These detailed phenomena cannot be completely taken into account by the rule-based approaches. A fully model-based approach, which integrates an in-house model-based optical proximity correction (OPC) algorithm with rigorous three-dimensional (3D) EUV mask simulation, is proposed to simultaneously compensate for shadowing and optical proximity effects with better pattern transfer fidelity and process windows. Preliminary results indicate that this fully model-based approach outperforms rule-based ones, in terms of geometric printability under process variations.

Paper Details

Date Published: 11 December 2009
PDF: 12 pages
Proc. SPIE 7520, Lithography Asia 2009, 75200S (11 December 2009); doi: 10.1117/12.837077
Show Author Affiliations
Philip C. W. Ng, National Taiwan Univ. (Taiwan)
Kuen-Yu Tsai, National Taiwan Univ. (Taiwan)
Yen-Min Lee, National Taiwan Univ. (Taiwan)
Ting-Han Pei, National Taiwan Univ. (Taiwan)
Fu-Min Wang, National Taiwan Univ. (Taiwan)
Jia-Han Li, National Taiwan Univ. (Taiwan)
Alek C. Chen, ASML Taiwan Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)

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