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Proceedings Paper

Electro-optical properties of silicon nanocrystals
Author(s): Alexandre Lacombe; Félix Beaudoin; François Martin; Guy G. Ross
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Paper Abstract

In the last decade, the luminescent properties of silicon nanocrystals (Si-nc) have been increasingly studied, since Si-nc are considered as good candidates for optical interconnects between ever-smaller integrated circuits (ICs) components, and for the monolithic integration of all-silicon photonic and electronic devices. For these applications, an efficient coupling between optical and electrical signals within Si-nc structures is required. In this article, the interaction between simultaneous optical and electrical stimulation of Si-nc is examined. To this end, the photoluminescence (PL) spectra of Si-nc obtained by ion implantation in a thin (40 to 60 nm) oxide layer of metal-oxide-semiconductor (MOS) devices has been recorded as a function of variable applied voltage biases at room temperature. Two remarkable features have been observed: an optical memory effect, due to asymmetric PL intensity modulation with respect to biasing polarity, and an efficient optical switching of an electric current in reverse bias operation. These results are explained in terms of the competing effects of the storage and the photogeneration of charge carriers in Si-nc and oxide defects, as indicated by the correlation between the PL intensity and the current flowing through the MOS devices. Moreover, the use of positively- and negatively- doped substrates in the MOS structures distinctly shows the different effects of electron injection over hole injection in Si-nc and their surrounding SiO2 matrix. These novel optoelectrical features of Si-nc are expected to add more functionality to future all-silicon photonic and electronic ICs.

Paper Details

Date Published: 4 August 2009
PDF: 9 pages
Proc. SPIE 7386, Photonics North 2009, 73860Y (4 August 2009); doi: 10.1117/12.836999
Show Author Affiliations
Alexandre Lacombe, INRS-EMT, Univ. du Québec (Canada)
Félix Beaudoin, INRS-EMT, Univ. du Québec (Canada)
François Martin, INRS-EMT, Univ. du Québec (Canada)
Guy G. Ross, INRS-EMT, Univ. du Québec (Canada)

Published in SPIE Proceedings Vol. 7386:
Photonics North 2009
Réal Vallée, Editor(s)

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