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Proceedings Paper

Relationship between dark conductivity and temperature for amorphous HgCdTe films
Author(s): Lianjie Yu; Yanli Shi; Wenjin He; Gongrong Deng; Fan Li; Rong Kang
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Paper Abstract

The relationship between the dark conductivity d) and temperature (T) of amorphous HgCdTe films has been investigated at 80-300 K. The measurement of σd as a function of T indicates the presence of four distinct regions: (I) For 250K≤T<300 K(3.3<1000/T≤4.0), σd is strongly increase with T increasing, the transport mechanism is dominated by extended state conduction, (II) for 180K≤T<250 K(4<1000/T≤5.6), σd is linearly increase with T increasing, hopping conduction between localized band tail state dominates the transport mechanism, (III) for 120K≤T<180K (5.6<1000/T≤8.3), σd is very small and weakly increase with T increasing, constant-range hopping conduction in localized states near the Fermi energy significantly contributes to the transport properties, and (IV) 80K≤T<120K (8.3<1000/T≤12.5), the dark conductivity of amorphous HgCdTe films is very small and weakly decreases with temperature increasing, it would be possible that the conductivity type of amorphous HgCdTe films converted about 120K, i.e. from the n type converted to p type. The temperature behavior of σd of amorphous HgCdTe was described in terms of the Mott-Davis model.

Paper Details

Date Published: 5 August 2009
PDF: 7 pages
Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73833N (5 August 2009); doi: 10.1117/12.836568
Show Author Affiliations
Lianjie Yu, Kunming Institute of Physics (China)
Yanli Shi, Kunming Institute of Physics (China)
Wenjin He, Kunming Institute of Physics (China)
Gongrong Deng, Kunming Institute of Physics (China)
Fan Li, Kunming Institute of Physics (China)
Rong Kang, Kunming Institute of Physics (China)

Published in SPIE Proceedings Vol. 7383:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications
Jeffery Puschell; Hai-mei Gong; Yi Cai; Jin Lu; Jin-dong Fei, Editor(s)

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