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Proceedings Paper

Investigation on the two-step passivation process for CdZnTe detectors
Author(s): Dongni Hu; Linjun Wang; Jiahua Min; Yue Lu; Jianyong Teng; Kaifeng Qin; Jijun Zhang; Jian Huang; Yiben Xia
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Paper Abstract

In this paper, the composition, morphology and electrical properties of the passivation layer for CdZnTe detectors were investigated. A two-step passivation was performed under different conditions, including passivation time, temperature and NH4F/H2O2 concentration. The obtained passivation layers were characterized by XRD, SEM, XRF and I-V methods. The results showed that the best passivation condition was with the NH4F/H2O2 concentration of 10wt%, passivation time of 40min and temperature of 20ºC. Under this condition, the passivation layer was purely oxidized and compact, and the surface leakage current of CZT crystals was most effectively reduced.

Paper Details

Date Published: 4 August 2009
PDF: 8 pages
Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73851G (4 August 2009); doi: 10.1117/12.835534
Show Author Affiliations
Dongni Hu, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Jiahua Min, Shanghai Univ. (China)
Yue Lu, Shanghai Univ. (China)
Jianyong Teng, Shanghai Univ. (China)
Kaifeng Qin, Shanghai Univ. (China)
Jijun Zhang, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7385:
International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications
X.-C. Zhang; James M. Ryan; Cun-lin Zhang; Chuan-xiang Tang, Editor(s)

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