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Proceedings Paper

Correlation of overlay performance and reticle substrate non-flatness effects in EUV lithography
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Paper Abstract

Image placement (IP) and overlay error specifications in the International Technology Roadmap for Semiconductors (ITRS) continue to get tighter with each successive technology node. One of the significant contributors to IP error is the non-flatness of the reticle substrate. In this paper, we will discuss in detail the effect of reticle substrate shape on the overlay performance in extreme ultraviolet (EUV) tools. Substrate shape-induced overlay effects are important when multiple device levels are printed using EUV lithography. We present an analysis of 20 blanks with different flatness specifications for overlay signatures when used for printing multiple device levels. A comprehensive analysis of scanner correctable and non-correctable errors for different substrate shapes will also be presented. Non-flatness specifications for EUV blanks will be reviewed based on these reticle-matching results. We will discuss results from flatness measurements and the effect on overlay budget due to mismatched substrates using several substrates with different flatness specifications.

Paper Details

Date Published: 30 September 2009
PDF: 9 pages
Proc. SPIE 7488, Photomask Technology 2009, 748816 (30 September 2009); doi: 10.1117/12.834746
Show Author Affiliations
Sudhar Raghunathan, Univ. at Albany (United States)
Adam Munder, Univ. at Albany (United States)
John Hartley, Univ. at Albany (United States)
Jaewoong Sohn, SEMATECH (United States)
Kevin Orvek, SEMATECH (United States)

Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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