In this paper, the design, simulation, fabrication and testing of an integrated thermoelectric infrared sensor have been demonstrated. The integrated thermoelectric sensor has been fabricated by a standard p-well CMOS technology and a maskless XeF₂ post-CMOS micromachining process. The modeling of the infrared sensor has been performed numerically using FEM method. With a 2.5 μm thick stacked silicon oxide-nitride-oxide multi-layers as absorber, the prototype sensor achieved a responsivity of 14.7 V W^-1, a specific detectivity of 4.07 × 10⁷ cm Hz^1/2 W^-1 and a time constant about 23 ms. The effects of XeF₂ etching on the CMOS devices have also been studied. XeF₂ post-CMOS micromachining was found to have insignificant effects on CMOS devices.

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812M (24 August 2009); doi: 10.1117/12.834699

Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)