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Proceedings Paper

Integrated thermoelectric infrared sensor with XeF2 etching
Author(s): De-hui Xu; Bin Xiong; Yue-lin Wang; Mi-feng Liu
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Paper Abstract

In this paper, the design, simulation, fabrication and testing of an integrated thermoelectric infrared sensor have been demonstrated. The integrated thermoelectric sensor has been fabricated by a standard p-well CMOS technology and a maskless XeF2 post-CMOS micromachining process. The modeling of the infrared sensor has been performed numerically using FEM method. With a 2.5 μm thick stacked silicon oxide-nitride-oxide multi-layers as absorber, the prototype sensor achieved a responsivity of 14.7 V W-1, a specific detectivity of 4.07 × 107 cm Hz1/2 W-1 and a time constant about 23 ms. The effects of XeF2 etching on the CMOS devices have also been studied. XeF2 post-CMOS micromachining was found to have insignificant effects on CMOS devices.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812M (24 August 2009);
Show Author Affiliations
De-hui Xu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate School of the Chinese Academy of Sciences (China)
Bin Xiong, Shanghai Institute of Microsystem and Information Technology (China)
Yue-lin Wang, Shanghai Institute of Microsystem and Information Technology (China)
Mi-feng Liu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate School of the Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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