
Proceedings Paper
Integrated thermoelectric infrared sensor with XeF2 etchingFormat | Member Price | Non-Member Price |
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Paper Abstract
In this paper, the design, simulation, fabrication and testing of an integrated thermoelectric infrared sensor
have been demonstrated. The integrated thermoelectric sensor has been fabricated by a standard p-well CMOS
technology and a maskless XeF2 post-CMOS micromachining process. The modeling of the infrared sensor
has been performed numerically using FEM method. With a 2.5 μm thick stacked silicon oxide-nitride-oxide
multi-layers as absorber, the prototype sensor achieved a responsivity of 14.7 V W-1, a specific detectivity of
4.07 × 107 cm Hz1/2 W-1 and a time constant about 23 ms. The effects of XeF2 etching on the CMOS devices
have also been studied. XeF2 post-CMOS micromachining was found to have insignificant effects on CMOS
devices.
Paper Details
Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812M (24 August 2009); doi: 10.1117/12.834699
Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812M (24 August 2009); doi: 10.1117/12.834699
Show Author Affiliations
De-hui Xu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate School of the Chinese Academy of Sciences (China)
Bin Xiong, Shanghai Institute of Microsystem and Information Technology (China)
Graduate School of the Chinese Academy of Sciences (China)
Bin Xiong, Shanghai Institute of Microsystem and Information Technology (China)
Yue-lin Wang, Shanghai Institute of Microsystem and Information Technology (China)
Mi-feng Liu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate School of the Chinese Academy of Sciences (China)
Mi-feng Liu, Shanghai Institute of Microsystem and Information Technology (China)
Graduate School of the Chinese Academy of Sciences (China)
Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)
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