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Proceedings Paper

Experimental test results of pattern placement metrology on photomasks with laser illumination source designed to address double patterning lithography challenges
Author(s): Klaus-Dieter Roeth; Frank Laske; Michael Heiden; Dieter Adam; Lidia Parisoli; Slawomir Czerkas; John Whittey; Karl-Heinrich Schmidt
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Paper Abstract

Double Patterning Lithography techniques place significantly greater demand on the requirements for pattern placement accuracy on photomasks. The influence of the pellicle on plate bending is also a factor especially when the pellicle distortions are not repeatable from substrate to substrate. The combination of increased demand for greater accuracy and the influence of pellicle distortions are key factors in the need for high resolution through-pellicle in-die measurements on actual device features. The above requirements triggered development of a new generation registration metrology tool based on in-depth experience with the LMS IPRO4. This paper reports on the initial experimental results of DUV laser illumination on features of various sizes using unique measurement algorithms developed specifically for pattern placement measurements.

Paper Details

Date Published: 23 September 2009
PDF: 8 pages
Proc. SPIE 7488, Photomask Technology 2009, 74881M (23 September 2009); doi: 10.1117/12.833203
Show Author Affiliations
Klaus-Dieter Roeth, KLA Tencor MIE GmbH (Germany)
Frank Laske, KLA Tencor MIE GmbH (Germany)
Michael Heiden, KLA Tencor MIE GmbH (Germany)
Dieter Adam, KLA Tencor MIE GmbH (Germany)
Lidia Parisoli, KLA Tencor MIE GmbH (Germany)
Slawomir Czerkas, KLA Tencor MIE GmbH (Germany)
John Whittey, KLA Tencor MIE GmbH (Germany)
Karl-Heinrich Schmidt, KLA Tencor MIE GmbH (Germany)

Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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