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Proceedings Paper

EUVL ML mask blank fiducial mark application for ML defect mitigation
Author(s): Pei-yang Yan
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Paper Abstract

Fabricating defect-free extreme ultraviolet lithography (EUVL) multi-layer (ML) mask blanks presents a big challenge in EUVL technology. ML defect sources primarily come from substrate defects and ML deposition adders. Defect reduction, therefore, needs to address many development aspects, such as substrate material, substrate polishing, substrate cleaning, blank handling, and ML deposition. High investment cost and potential low blank yield can quickly drive up EUVL cost of ownership. However, allowing a few defects on the ML blank can improve the blank yield drastically. Utilizing such defect-blanks through defect mitigation schemes has been proposed. It includes directly repairing small ML phase and amplitude defects, mask absorber pattern proximity repair, and using absorber pattern to cover the ML defects. It includes directly repairing small ML phase and amplitude defects,1-2 repairing mask absorber pattern to compensate the effect of an adjacent ML defect,3 and using absorber pattern to cover the ML defects.4 In each case, the ML defects will first need to be identified and located during the ML blank defect inspection. To precisely locate the ML defects on the blank, fiducial marks on the ML blank are needed for mask alignment and defect location identification. In this paper, we will present the details of the ML defect mitigation process flow, i.e., using absorber pattern to cover the ML defects, and the corresponding experimental validation of this mitigation flow. We will also discuss the fiducial marking scheme, its application in the defect mitigation flow, the error budget of ML defect mitigation, such as defect position measurement error, fiducial mask position error, e-beam alignment errors, etc.

Paper Details

Date Published: 29 September 2009
PDF: 8 pages
Proc. SPIE 7488, Photomask Technology 2009, 748819 (29 September 2009); doi: 10.1117/12.831127
Show Author Affiliations
Pei-yang Yan, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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