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Proceedings Paper

Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier
Author(s): F. Amir; C. Mitchell; N. Farrington; M. Missous
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Paper Abstract

An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work. The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre wave for use as a high power (multi mW) Terahertz source in conjunction with a mm-wave multiplier, with novel Schottky diodes. The epitaxial growth of both the Gunn diode and Schottky diode wafers were performed using an industrial scale Molecular Beam Epitaxy (V100+) reactor. The Gunn diodes were then manufactured and packaged by e2v Technologies (UK) Plc. Physical models of the high power Gunn diode sources, presented here, are developed in SILVACO.

Paper Details

Date Published: 17 September 2009
PDF: 11 pages
Proc. SPIE 7485, Millimetre Wave and Terahertz Sensors and Technology II, 74850I (17 September 2009); doi: 10.1117/12.830296
Show Author Affiliations
F. Amir, The Univ. of Manchester (United Kingdom)
C. Mitchell, The Univ. of Manchester (United Kingdom)
N. Farrington, e2v technologies (UK) Ltd. (United Kingdom)
M. Missous, The Univ. of Manchester (United Kingdom)

Published in SPIE Proceedings Vol. 7485:
Millimetre Wave and Terahertz Sensors and Technology II
Keith A. Krapels; Neil A. Salmon, Editor(s)

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