
Proceedings Paper
3D Si aperture-plates combined with programmable blanking-plates for multi-beam mask writingFormat | Member Price | Non-Member Price |
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Paper Abstract
Multi-beam lithography is considered a promising fabrication technology for future node mask making. Due to rising
design complexity and therefore increasing pattern writing times the multi-beam approach has distinguished throughput
advantages compared to state of the art variable shaped beam pattern generators.
A key component of a projection multi-beam writing tool is the programmable blanking-plate for generating the desired
pattern geometry on the mask substrate.
In our case a highly parallel charged particle beam illuminates a Si aperture-plate which shapes and generates many
thousand individual spot beams. These beams pass through a blanking-plate with integrated CMOS electronics for demultiplexing
the writing data. The blanking-plate is equipped with blanking and ground electrodes placed around the
apertures switching the beams "on" or "off", dependent on the desired pattern. The beam array is demagnified by a 200x
reduction optics and the exposure of the mask substrate is done in stripes by a continuous moving stage [1,2].
Cross talk between adjacent beams in the blanking-plate has to be avoided to ensure adequate pattern fidelity and line
edge roughness on the mask substrate. One solution is the insertion of a 3D Si aperture-plate in proximity to the
blanking- plate shielding the blanking electrodes from each other during operation.
We developed and characterized a new process flow for the fabrication of these 3D Si aperture-plates for the case of 43
thousand beams in parallel and will present and discuss the cross talk results for blanking-plates combined with standard
2D and new 3D Si aperture-plates.
Paper Details
Date Published: 23 September 2009
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 74883C (23 September 2009); doi: 10.1117/12.829630
Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 74883C (23 September 2009); doi: 10.1117/12.829630
Show Author Affiliations
Florian Letzkus, IMS Chips (Germany)
Mathias Irmscher, IMS Chips (Germany)
Michael Jurisch, IMS Chips (Germany)
Mathias Irmscher, IMS Chips (Germany)
Michael Jurisch, IMS Chips (Germany)
Elmar Platzgummer, IMS Nanofabrication AG (Austria)
Christof Klein, IMS Nanofabrication AG (Austria)
Hans Loeschner, IMS Nanofabrication AG (Austria)
Christof Klein, IMS Nanofabrication AG (Austria)
Hans Loeschner, IMS Nanofabrication AG (Austria)
Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)
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