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Proceedings Paper

Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers
Author(s): P. Crump; H. Wenzel; G. Erbert; G. Tränkle
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Paper Abstract

High power broad area diode lasers generate the optical energy in all high performance, high power laser systems, either directly or as pump sources for fiber or solid state lasers. Advances in the spectral and spatial brightness of these diode lasers are essential for further increases in system performance. Recent development work at the Ferdinand-Braun- Institut für Höchstfrequenztechnik has lead to significant improvements in diode laser performance. Our ongoing broad area laser research programs, for example, seek to increase the peak reliable output power (in CW, QCW and short pulse regimes), minimize the vertical and lateral far field emission angles, narrow the spectral line width of the emission and increase the power conversion efficiency. Wavelengths between 800 nm and 1100 nm were investigated, with development work focused on specific applications. We present a summary of this research and discuss how performance can be further improved.

Paper Details

Date Published: 25 September 2009
PDF: 10 pages
Proc. SPIE 7483, Technologies for Optical Countermeasures VI, 74830B (25 September 2009); doi: 10.1117/12.829617
Show Author Affiliations
P. Crump, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
H. Wenzel, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 7483:
Technologies for Optical Countermeasures VI
David H. Titterton; Mark A. Richardson, Editor(s)

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