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Proceedings Paper

Minimizing shadow losses in III-nitride solar cells
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Paper Abstract

In this work InGa0.85N p-n homojunction solar cells were grown by MOCVD on GaN/sapphire substrates and fabricated using standard techniques. When illuminated from the backside, these devices showed 65.9% improvement in JSC and 4.4% improvement in VOC as compared to identical illumination from the front. These improvements arise from removal of the losses from electrical contact shading on the front of the devices (11.7% of active area), as well as significant optical absorption by the top current spreading layer. These improvements can likely be further enhanced by utilizing double-side polished wafers, which would eliminate scattering losses on the back surface. In addition to improving electrical characteristics of single cells, backside illumination is necessary for the realization of monolithic tandem InGaN solar cells.

Paper Details

Date Published: 20 August 2009
PDF: 7 pages
Proc. SPIE 7409, Thin Film Solar Technology, 740916 (20 August 2009); doi: 10.1117/12.829264
Show Author Affiliations
Andrew Melton, Georgia Institute of Technology (United States)
Balakrishnam Jampana, Univ. of Delaware (United States)
Robert Opila, Univ. of Delaware (United States)
Christiana Honsberg, Arizona State Univ. (United States)
Muhammad Jamil, Georgia Institute of Technology (United States)
Ian Ferguson, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7409:
Thin Film Solar Technology
Alan E. Delahoy; Louay A. Eldada, Editor(s)

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