The plasma generated by dielectric barrier discharge(DBD) with the atmosphere of lasting modifying materials, gives modification to the surfaces of FFC backsheet, which is formed by coating FFC (a tetra-fluoro based material with high content of fluorine) on the double-surfaces of polyester(PET). The research on the character of FFC backsheet before and after DBD modification is hold through a series analyzing ways, such as measuring the surface contact angles and surface energy of FFC backsheet with different plasma modification time and different DBD power density, comparing the preservation of surface energy of FFC backsheet with different storage medium and storage period, observing the surfaces of FFC backsheet through scanning electron microscope(SEM), making use of Fourier transform attenuated total reflectance infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS). Meanwhile, the soalr cell modules using FFC backsheet and other backsheets are tested under the condition of 85centigrade×85%RH to make comparison between FFC backsheet and other backsheets in various aspects, like the peel strength between backsheet and EVA and so on. All the tests show both the microscopic appearance and surface chemical composition of FFC backsheet is changed after the DBD plasma modification with the atmosphere of lasting modifying materials. After the DBD plasma modifications with a power density of 4.07W/cm² and different modification time, the water contact angle for FFC backsheet surface is reduced from 82° to 38°. Comparing with other types of backsheets as the solar cell modules encapsulant materials, FFC backsheet has obvious advantage in humit-heat aging resistant performance of the peel strength with EVA and other respects.

Date Published: 20 August 2009
PDF: 12 pages
Proc. SPIE 7412, Reliability of Photovoltaic Cells, Modules, Components, and Systems II, 74120C (20 August 2009); doi: 10.1117/12.825430

Published in SPIE Proceedings Vol. 7412:
Reliability of Photovoltaic Cells, Modules, Components, and Systems II
Neelkanth G. Dhere; John H. Wohlgemuth; Dan T. Ton, Editor(s)