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Proceedings Paper

Solution processed low-voltage organic transistors based on self-assembled monolayer gate dielectrics
Author(s): James M. Ball; Paul H. Wöbkenberg; Florian Colléaux; Jeremy Smith; Donal D. C. Bradley; Thomas D. Anthopoulos
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Paper Abstract

Reduction in the operating voltage of organic field-effect transistors (OFETs) is sought for their successful implementation into future portable and low-power electronic applications. Here we demonstrate OFETs with operation below 2 V enabled by the use of self-assembled monolayer (SAM) gate dielectrics with high geometrical capacitances. A high surface energy monolayer is chosen to allow processing of small molecule semiconductors from solution. Impedance spectroscopy measurements of metal-insulator-semiconductor devices suggest the geometrical capacitance of the alumina-SAM dielectric can reach ~1 μF/cm2 when accumulating charge at the semiconductor-insulator interface. Atomic force microscopy images reveal that the glass substrates and the SAM-functionalized aluminum gate electrode display significant roughness. Despite this, mobilities of 0.02 cm2/Vs are demonstrated. These results represent an important step towards low-power solution processable electronics.

Paper Details

Date Published: 20 August 2009
PDF: 7 pages
Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 741711 (20 August 2009); doi: 10.1117/12.825339
Show Author Affiliations
James M. Ball, Imperial College London (United Kingdom)
Paul H. Wöbkenberg, Imperial College London (United Kingdom)
Florian Colléaux, Imperial College London (United Kingdom)
Jeremy Smith, Imperial College London (United Kingdom)
Donal D. C. Bradley, Imperial College London (United Kingdom)
Thomas D. Anthopoulos, Imperial College London (United Kingdom)

Published in SPIE Proceedings Vol. 7417:
Organic Field-Effect Transistors VIII
Zhenan Bao; Iain McCulloch, Editor(s)

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