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Proceedings Paper

Mask defect auto disposition based on aerial image in mask production
Author(s): C. Y. Chen; Laurent Tuo; C. S. Yoo; Linyong Pang; Danping Peng; Jin Sun
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Paper Abstract

At the most advanced technology nodes, such as 45nm and below, aggressive OPC and Sub-Resolution Assist Features (SRAFs) are required. However, their use results in significantly increased mask complexity, making mask defect disposition more challenging than ever. In an attempt to mitigate such difficulties, new mask inspection technologies that rely on hardware emulation and software simulation to obtain aerial image at the wafer plane have been developed; however, automatic mask disposition based on aerial image is still problematic because aerial image does not give the final resist CD or contour, which are commonly used in lithography verification on post OPC masks. In this paper, an automated mask defect disposition system that remedies these shortcomings is described. The system, currently in use for mask production, works in both die-to-die and die-to-database modes, and can operate on aerial images from both AIMSTM and aerial-image-based inline mask inspection tools. The disposition criteria are primarily based on waferplane CD variance. The system also connects to a post-OPC lithography verification tool that can provide gauges and CD specs, which are then used in the mask defect disposition.

Paper Details

Date Published: 11 May 2009
PDF: 11 pages
Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791F (11 May 2009); doi: 10.1117/12.824292
Show Author Affiliations
C. Y. Chen, Tawian Seminconductor Manufacturing Company (Taiwan)
Laurent Tuo, Tawian Seminconductor Manufacturing Company (Taiwan)
C. S. Yoo, Tawian Seminconductor Manufacturing Company (Taiwan)
Linyong Pang, Luminescent Technologies, Inc. (United States)
Danping Peng, Luminescent Technologies, Inc. (United States)
Jin Sun, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 7379:
Photomask and Next-Generation Lithography Mask Technology XVI
Kunihiro Hosono, Editor(s)

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