Share Email Print
cover

Proceedings Paper

Influence of the light irradiation on optical characteristics of As2(SxSe1-x)3 thin films obtained from chemical solutions
Author(s): M. S. Iovu; S. A. Buzurniuc; V. I. Verlan; A. Prisacari; L. Malahov
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Results of researches on technology of deposition of thin layers of mixed composition As2(SxSe1-x)3 (0 <x <1), obtained from chemical solutions of separate components As2S3 and As2Se3 are given, and some optical properties (transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of edge of absorption in infra-red (IR) area were found at ultra-violet (UV) and actinic irradiations. The maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording (λ=488 nm)) on thin layers is 2.5 % and after additional processing in the negative etching is 36 %.

Paper Details

Date Published: 7 January 2009
PDF: 5 pages
Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72970V (7 January 2009); doi: 10.1117/12.823641
Show Author Affiliations
M. S. Iovu, Institute of Applied Physics (Moldova)
S. A. Buzurniuc, Institute of Applied Physics (Moldova)
V. I. Verlan, Institute of Applied Physics (Moldova)
A. Prisacari, Institute of Applied Physics (Moldova)
L. Malahov, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 7297:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV
Paul Schiopu; Cornel Panait; George Caruntu; Adrian Manea, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray