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Proceedings Paper

Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films
Author(s): Jarmila Müllerová; Veronika Vavruñková; Pavel Šutta; Rudolf Srnánek
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Paper Abstract

We report results obtained from measurements of UV Vis, FTIR and Raman spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen. Spectral refractive indices, extinction coefficients, optical band gap energies, hydrogen content, the microstructure factor, and grain size were determined as a function of the hydrogen dilution. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). With increasing dilution Si:H films become mixed-phase materials with changing volume fractions of crystalline and amorphous phases and voids. The optical band gap energies were determined from transmittance spectra. The grain size was determined from Raman spectra and the contribution of small and large grains was detected.

Paper Details

Date Published: 20 November 2008
PDF: 8 pages
Proc. SPIE 7141, 16th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 714103 (20 November 2008); doi: 10.1117/12.822348
Show Author Affiliations
Jarmila Müllerová, Univ. of Žilina (Slovakia)
Veronika Vavruñková, Univ. of West Bohemia (Czech Republic)
Pavel Šutta, Univ. of West Bohemia (Czech Republic)
Rudolf Srnánek, Slovak Univ. of Technology (Slovakia)

Published in SPIE Proceedings Vol. 7141:
16th Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Agnieszka Popiolek-Masajada; Elzbieta Jankowska; Waclaw Urbanczyk, Editor(s)

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