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Proceedings Paper

Self-tuning flexible output nanosecond gate unit for image intensifiers and photomultipliers
Author(s): J. S. Milnes; P. Kapetanopoulos; J. Howorth; M. Ingle; P. Simpson; G. Smith
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Paper Abstract

Gate units designed using a push-pull MOSFET output for single nanosecond ultra-fast electronic shuttering (or "gating") of image intensifiers or photomultipliers normally have to be tuned to fit the capacitance load of the detector being gated. Photek has developed a self-tuning gate unit that automatically achieves the fastest possible gating speed for any capacitance load up to 250 pF. We demonstrate an exposure time of 2 ns for a 9 mm × 9 mm segment on a 40 mm diameter detector divided into 8 segments for high speed framing. The same gate unit is capable of an exposure time of 10 ns for a full 75 mm diameter working area detector. We also demonstrate transition times in single nanoseconds from "OFF" to fully "ON" on large area ultrafast photomultipliers tubes. Sub-nanosecond gate units based on avalanche technology are often limited to short gate exposures or are unable to achieve d.c. operation. This new development has a fully flexible output that follows the TTL trigger input right up to d.c. exposure and is capable of repetition rates up to 200 KHz.

Paper Details

Date Published: 10 February 2009
PDF: 8 pages
Proc. SPIE 7126, 28th International Congress on High-Speed Imaging and Photonics, 71261A (10 February 2009); doi: 10.1117/12.822234
Show Author Affiliations
J. S. Milnes, Photek Ltd. (United Kingdom)
P. Kapetanopoulos, Photek Ltd. (United Kingdom)
J. Howorth, Photek Ltd. (United Kingdom)
M. Ingle, Photek Ltd. (United Kingdom)
P. Simpson, Photek Ltd. (United Kingdom)
G. Smith, Atomic Weapons Establishment (United Kingdom)

Published in SPIE Proceedings Vol. 7126:
28th International Congress on High-Speed Imaging and Photonics
Harald Kleine; Martha Patricia Butron Guillen, Editor(s)

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