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Proceedings Paper

Local charge storage and decay mechanism in silica
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Paper Abstract

Positive and negative charges are stored locally in thin films of silicon oxide on silicon by applying a voltage between an AFM cantilever tip and the silicon substrate. The stored charges are displayed by Kelvin probe force microscopy (KPFM). The process of charge storing is investigated with respect to different dwell times and different voltages. The amount of stored charges increases both with applied voltage and dwell time. A decay mechanism of the charges with two different time regimes is discussed. A fast decay is attributed to a migration parallel to the surface, while the second one is dominated by a transport perpendicular to the substrate surface.

Paper Details

Date Published: 28 May 2009
PDF: 8 pages
Proc. SPIE 7364, Nanotechnology IV, 736405 (28 May 2009); doi: 10.1117/12.821457
Show Author Affiliations
Harald Graaf, Chemnitz Univ. of Technology (Germany)
Carsten Maedler, Chemnitz Univ. of Technology (Germany)
Christian von Borczyskowski, Chemnitz Univ. of Technology (Germany)

Published in SPIE Proceedings Vol. 7364:
Nanotechnology IV
Achim Wixforth, Editor(s)

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