
Proceedings Paper
Near-infrared resonant cavity enhanced silicon microsphere photodetectorFormat | Member Price | Non-Member Price |
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Paper Abstract
Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 104.
Paper Details
Date Published: 20 May 2009
PDF: 5 pages
Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661M (20 May 2009); doi: 10.1117/12.821198
Published in SPIE Proceedings Vol. 7366:
Photonic Materials, Devices, and Applications III
Ali Serpenguzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)
PDF: 5 pages
Proc. SPIE 7366, Photonic Materials, Devices, and Applications III, 73661M (20 May 2009); doi: 10.1117/12.821198
Show Author Affiliations
Published in SPIE Proceedings Vol. 7366:
Photonic Materials, Devices, and Applications III
Ali Serpenguzel; Gonçal Badenes; Giancarlo C. Righini, Editor(s)
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