
Proceedings Paper
DFT study of geometries and stability of Bn clusters (n=2-8)Format | Member Price | Non-Member Price |
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Paper Abstract
With density functional theory (DFT), the structures and stability of Bn clusters with n=2-8 have been studied. By
using the all electron basis, all the geometries have been globally optimized without any symmetry constraint. It is found
that all the small Bn (n=2-8) clusters prefer to form planar structures with sp2 bonds, which are in good agreement with
others' related studies. Bn and Bn- are also compared. In contrast with the neutral Bn clusters, although B-B distances in
Bn
- have slight differences, but addition of one electron does not change their structures significantly. As for energies, all
the anions are lying lower than their corresponding neutral clusters. In addition, calculations of energetic and electronic
properties for all the neutral clusters have been presented. Both of these two properties show that in Bn (n=2-8), B3 and
B5 are more stable than others. Vibrational spectra of Bn (n=3-8) clusters have also been discussed. In each spectrum,
intensity peaks which are associated with the vibration of boron clusters related to B-B bond stretching can be observed
and they are highest. However, among all the Bn clusters, such peaks of B3 and B5 show lower intensity than others. This
results suggest that B3 and B5 are relatively more stable, which further demonstrates the conclusion above.
Paper Details
Date Published: 19 February 2009
PDF: 8 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790K (19 February 2009); doi: 10.1117/12.821155
Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)
PDF: 8 pages
Proc. SPIE 7279, Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration, 72790K (19 February 2009); doi: 10.1117/12.821155
Show Author Affiliations
Dong-Mei Li, Jiangxi Science and Technology Normal Univ. (China)
Zhi-Hua Xiong, Jiangxi Science and Technology Normal Univ. (China)
Qi-Xin Wan, Jiangxi Science and Technology Normal Univ. (China)
Zhi-Hua Xiong, Jiangxi Science and Technology Normal Univ. (China)
Qi-Xin Wan, Jiangxi Science and Technology Normal Univ. (China)
Guo-Dong Liu, Jiangxi Science and Technology Normal Univ. (China)
Wen-Rui Zhang, Jiangxi Science and Technology Normal Univ. (China)
Zhong Ren, Jiangxi Science and Technology Normal Univ. (China)
Wen-Rui Zhang, Jiangxi Science and Technology Normal Univ. (China)
Zhong Ren, Jiangxi Science and Technology Normal Univ. (China)
Published in SPIE Proceedings Vol. 7279:
Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration
Liming Zhang; Michael J. O'Mahony, Editor(s)
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