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Proceedings Paper

Measuring small thickness changes of a thin film by white-light spectral interferometry
Author(s): P. Hlubina; J. Lunácek; D. Ciprian; M. Lunácková
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Paper Abstract

A white-light spectral interferometric technique is used for measuring small thickness changes of a SiO2 thin film grown by thermal oxidation on a Si substrate. The technique is based on recording of the spectral interferograms in a Michelson interferometer with one of its mirrors replaced by a thin-film structure. From the spectral interferograms, the nonlinear-like phase function related to the phase change on reflection from the thin-film structure is retrieved. The phase function is fitted to the theoretical one to obtain the thin-film thickness precisely provided that the optical constants of the thin-film structure are known. This procedure is used for measuring small thickness changes of a SiO2 thin film attributed to different dopant concentrations of a Si substrate. The results of the technique are compared with those obtained by spectral reflectometry and very good agreement is confirmed.

Paper Details

Date Published: 18 May 2009
PDF: 8 pages
Proc. SPIE 7356, Optical Sensors 2009, 735618 (18 May 2009); doi: 10.1117/12.820005
Show Author Affiliations
P. Hlubina, Technical Univ. of Ostrava (Czech Republic)
J. Lunácek, Technical Univ. of Ostrava (Czech Republic)
D. Ciprian, Technical Univ. of Ostrava (Czech Republic)
M. Lunácková, Technical Univ. of Ostrava (Czech Republic)


Published in SPIE Proceedings Vol. 7356:
Optical Sensors 2009
Francesco Baldini; Jiri Homola; Robert A. Lieberman, Editor(s)

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