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Proceedings Paper

Dark spatial photovoltaic solitons and soliton-induced waveguide elements in ion-implanted planar lithium niobate waveguides
Author(s): Vitaly G. Kruglov; Vladimir M. Shandarov; Yang Tan; Feng Chen; Detlef Kip
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Paper Abstract

Formation of dark spatial optical solitons in planar waveguides produced by implantation of light ions into Fe- or Cudoped X cut lithium niobate wafers is experimentally studied. The implantation both of protons and O3+-ions results in the excellent waveguide layers with their thickness about 3 microns and optical losses less than 1 dB/cm. The soliton states at light wavelengths of 532 nm and 633 nm are developed due to the self-defocusing photorefractive-photovoltaic nonlinearity of lithium niobate. Extraordinarily polarized light beams are used in experiments to form dark solitons and to probe the soliton-induced waveguide channels. Steady-state dark photovoltaic spatial solitons have been realized in both, H+- implanted and O3+ - implanted planar waveguides at optical powers from 10 to 100 microwatts. The storage time of soliton-induced channel waveguides makes up at least some hours without special illumination of a planar waveguide and they may be erased within some seconds in a case of their permanent readout with stronger light beams. The possibility to form more complicated channel waveguide structures in regimes of dark spatial solitons is also demonstrated.

Paper Details

Date Published: 18 November 2008
PDF: 4 pages
Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381M (18 November 2008); doi: 10.1117/12.818044
Show Author Affiliations
Vitaly G. Kruglov, Tomsk State Univ. of Control Systems and Radioelectronics (Russian Federation)
Vladimir M. Shandarov, Tomsk State Univ. of Control Systems and Radioelectronics (Russian Federation)
Yang Tan, Shandong Univ. (China)
Feng Chen, Shandong Univ. (China)
Detlef Kip, Clausthal Univ. of Technology (Germany)

Published in SPIE Proceedings Vol. 7138:
Photonics, Devices, and Systems IV
Pavel Tománek; Dagmar Senderáková; Miroslav Hrabovský, Editor(s)

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